Submission + - Nanotube array transistor breaks new record (nanotechweb.org)
wasteoid writes: Researchers at the University of Wisconsin-Madison are the first to have fabricated carbon nanotube transistors (CNTs) that outperform the current-density of conventional semiconductors like silicon and gallium arsenide.
“When the transistors are turned on to the conductive state (meaning that current is able to pass through the CNT channel) the amount of current travelling through each CNT in the array approaches the fundamental quantum limit,” he tells nanotechweb.org. “Since the CNTs conduct in parallel, and the packing density and conductance per tube are very high, the overall current density is very high too – at nearly twice that of silicon’s. The result is that these CNT array FETs have a conductance that is seven times higher than any previous reported CNT array FET (field-effect transistor).
“When the transistors are turned on to the conductive state (meaning that current is able to pass through the CNT channel) the amount of current travelling through each CNT in the array approaches the fundamental quantum limit,” he tells nanotechweb.org. “Since the CNTs conduct in parallel, and the packing density and conductance per tube are very high, the overall current density is very high too – at nearly twice that of silicon’s. The result is that these CNT array FETs have a conductance that is seven times higher than any previous reported CNT array FET (field-effect transistor).
