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Comment Re:The article refers to a 'device' (Score 4, Informative) 19

No. The abstract to their publication (Appl Phys Lett 85 145) begins:

We demonstrate a single-walled carbon nanotube p-n junction diode device. The p-n junction is formed along a single nanotube by electrostatic doping using a pair of split gate electrodes. By biasing the two gates accordingly, the device can function either as a diode or as an ambipolar field-effect transistor.

It's a device.

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