Comment doping confusion (Score 1) 126
The article states that compressing p-doped regions improves hole conduction and stretching n-doped regions improves electron conduction. Fair enough, but to me the p-doped and n-doped designations are either backwards or irrelevant.
For example, an n-channel MOS device is built in a p-type well. The channel (region between source and drain) is p-type when the device isn't conducting current, but the channel must be inverted to n-type before electrons can flow from source to drain. Correct me if I'm wrong, but it would make more sense to say that the p-well is stretched so that when it is inverted, electron conduction in the channel is improved.
I wonder how much layout re-work had to be done to implement moats of SiGe around individuel transistors or groups of transistors. Yikes!
For example, an n-channel MOS device is built in a p-type well. The channel (region between source and drain) is p-type when the device isn't conducting current, but the channel must be inverted to n-type before electrons can flow from source to drain. Correct me if I'm wrong, but it would make more sense to say that the p-well is stretched so that when it is inverted, electron conduction in the channel is improved.
I wonder how much layout re-work had to be done to implement moats of SiGe around individuel transistors or groups of transistors. Yikes!
