Comment Re:Ironic, as usual (Score 1) 139
You are confusing perfection of structure with chemical purity. Pure semiconductors have high resistance because the band gap suppresses intrinsic carriers. The intrinsic carrier concentration has to be low for most devices to work properly. This allows you to make some parts n-type and other parts p-type by doping the material with impurities (electron donors or acceptors). Higher carrier concentrations bring lower resistance.
Polysilicon in this article is silicon that has been purified from the original mineral source (ie quartz). It is 100% silicon (actually some number of 9's). This is what you would throw into your reactor to grow ingots of single crystal silicon to slice up for wafers. But the purity is already there in the polysilicon. Depending on the purpose, the wafers will probably be doped (reducing purity) to make them n-type or p-type.
You can also deposit polysilicon on wafers for gate metal during IC manufacturing. Imperfections in the crystal decrease the mobility of carriers because the great quantum dance is interrupted by misplaced atoms and grain boundaries. So at the same carrier concentration, polysilicon has higher resistance than single crystal. But without the impurities that generate carriers, the resistance will be high. So gate metal polysilicon is also doped to get the resistance to a useful point.
Polysilicon in this article is silicon that has been purified from the original mineral source (ie quartz). It is 100% silicon (actually some number of 9's). This is what you would throw into your reactor to grow ingots of single crystal silicon to slice up for wafers. But the purity is already there in the polysilicon. Depending on the purpose, the wafers will probably be doped (reducing purity) to make them n-type or p-type.
You can also deposit polysilicon on wafers for gate metal during IC manufacturing. Imperfections in the crystal decrease the mobility of carriers because the great quantum dance is interrupted by misplaced atoms and grain boundaries. So at the same carrier concentration, polysilicon has higher resistance than single crystal. But without the impurities that generate carriers, the resistance will be high. So gate metal polysilicon is also doped to get the resistance to a useful point.