Submission + - Epson and Fujitsu develops next-gen FRAM tech
Vinit writes: "Since June 2005, when the joint development project on next generation FRAM technology was announced, Epson and Fujitsu has made a lot of progress in the non volatile memory segment. Recently they announced the result of their project which was successfully completed. FRAM is a non-volatile memory that uses a ferroelectric film as the capacitor for data retention. Their scientists has developed technology for forming, processing and evaluating a new ferroelectric (PZT) film and created FRAM memory core process technology that is highly integrated (four times the level of conventional FRAM), features high performance (read/write speeds over three times faster than conventional FRAM) and boasts high reliability (capable of more than one hundred trillion read/write cycles). The ferroelectric process is suitable for the development of mass production technologies because it can be easily added to existing CMOS logic processes. Both the companies plans to manufacture their own memory based on the result of this project.
http://www.pclaunches.com/epson_and_fujitsu_develo ps_nextgen_fram_technology.php"