Mickeycaskill writes: Cambridge Electronics Inc (CEI), formed of researchers from the Massachusetts Institute of Technology (MIT), claim semiconductors made of gallium nitride (GaN) could reduce the power consumption of data centers and consumer electronics by 20 percent by 2025. CEI has revealed a range of GaN transistors and power electronic circuits that have just one tenth of the resistance of silicon, resulting in much higher energy efficiency. The company claims to have overcome previous barriers to adoption such as safety concerns and expense through new manufacturing techniques. "Basically, we are fabricating our advanced GaN transistors and circuits in conventional silicon foundries, at the cost of silicon. The cost is the same, but the performance of the new devices is 100 times better," Cambridge Electronics researcher Bin Lu said.