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Submission + - Hynix working on DRAM replacement technology (eetimes.com)

An anonymous reader writes: Innovative Silicon Inc. (Santa Clara, Calif.), a pioneer of floating-body memory, has said it has adapted its technology for operation at less than one volt and so that it does not require a silicon-on-insulator substrate. A test chip generated at Hynix Semiconductor Inc. using 54-nm design rules, has demonstrates Z-RAM technology is a contender as the lowest cost and lowest power DRAM replacement technology, according to this EE Times story. "These results validate that the Z-RAM technology has great potential to replace conventional DRAM over the next few memory generations," the story quotes Sungjoo Hong, vice president of DRAM R&D at Hynix Semiconductor, as saying.

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