Sorry, I went all internet tough guy back there...
I should clarify what I meant.
1st: E-beam lithography as I know it; with an E-beam resist is pretty much the creme of the crop if you want ultra high resolution. It is also a very old technique IE they were looking at it to replace photo-lithography as far back as the '80s but there are difficulties with making a bright electron beam to do the lithography in a parallel manner. Therefore its been used serially with a beam rastering the resist to make the desired patterns. With this techniques you can make very small features.
2nd: I am un-aware (doesn't mean it doesn't exist, just that its outside of my research area) of any analogous ion beam processes; in that we are talking about using a polymer resist activated by an ion beam. There are however very interesting nano patterning methods that use implanted ions either in a sacrificial layer or in the substrate itself, followed by selective etching that could arguably be thought of as ion-beam lithography.
3rd: Focused Ion Beams (FIB) is a rather mature technique for circuit repair and editing because it acts as both and additive and a subtractive process. With the FIB we can make deep holes using gas assisted etching, and then deposit with gas deposition both conductors and insulators. The real advantage of this technique is that we can see what we are doing!! Imaging can be done either with the ion beam or a separate electron beam allowing us to see the structures we are working on with the same or better resolution than we can write or etch with. Normally however FIBs use Gallium (Ga) ions as they are a convenient ion source (the melting point is low and the vapor pressure is also low) these ions are rather heavy and cause damage to the substrate (this can be mitigated through careful selection of the beam energy and angle), Ga also acts as a dopant in silicon.
4th: There was a company that tried to deal with the serial nature of focused ion beam milling. This company developed a 1024 beam array where each beam could be individually steered or turned on or off using a selector plate made with standard Si manufacturing techniques. This device used Argon (Ar) ions to avoid doping. Sadly it seems this company has stopped developing this device. They might be entering with a similar setup for electron beams in the future. My understanding is that the ion beam device worked best for gas-assisted processes where the deposition or etching gas is activated by secondary electrons freed when the ion hits the target. Seeing as an electron beam also free secondary electrons I think they changed directions to an electron only technique but these are only rumors I've heard around work.
Both Ion beam and electron beam techniques are more difficult than they appear as the yield (either sputtering or secondary electron) is dependent upon the incidence angle between the beam and the surface. It therefore becomes much more difficult to predict the interactions once the surface is no longer planar.
My comment about the 30nm not being all that sexy was with respect to TFA, I saw this on FEI's facebook page a couple of weeks ago and thought the same thing. Yes its neat that they can make shapes at this size with good control (heaven knows we can't do it yet with electron deposition or fib deposition [we can make cute test cases but we are far from arbitrary shapes even though we can do overhangs already]), but for me the real limitation is that they seem quite limited with respect to the materials that they can make things out of. I'm sure this is a great thing and we will see some neat tricks in the future with people either using these printed structures at templates for some nano imprint lithography, or as high tech resist with some neat deposition into the voids. My real problem with TFA is that they are using polymers and I don't like polymers.
So anyway, yes we can make feature sizes less than 30nm with both electron beams and ion beams; however we are still a long way away from being able to make a demo as seen in the video. Large scale E-beam is hard! If we wanted to replace photo-lithography with E-beam lithography we would need much brighter sources and much more sensitive resists.... which are exactly the problems faced by EUV. The good news is that there is a lot of money going into solving these problems so we may find solutions to both problems which may one day make large scale E-beam feasible.