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Submission + - MIT reports 400 GHz graphene transistor possible with 'Negative resistance' (technologyreview.com) 1

An anonymous reader writes: The idea is to take a standard graphene field-effect transistor and find the circumstances in which it demonstrates negative resistance (or negative differential resistance, as they call it). They then use the dip in voltage, like a kind of switch, to perform logic.
They show how several graphene field-effect transistors can be combined and manipulated in a way that produces conventional logic gates. Graphene-based circuit can match patterns and it has several important advantages over silicon-based versions.
Liu and co can build elementary XOR gates out of only three graphene field-effect transistors compared to the eight or more required using silicon. That translates into a significantly smaller area on a chip. What’s more, graphene transistors can operate at speeds of over 400 GHz.

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MIT reports 400 GHz graphene transistor possible with 'Negative resistance'

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