Lucas123 writes: The three largest memory makers announced the final specifications for three-dimensional DRAM, which is aimed at increasing performance for networking and high performance computing markets. Micron, Samsung and Hynix are leading the technology development efforts backed by the Hybrid Memory Cube Consortium (HMC). The Hybrid Memory Cube will stack multiple volatile memory dies on top of a DRAM controller. The result is a DRAM chip that has an aggregate bandwidth of 160GB/s, 15 times more throughput as standard DRAMs, while also reducing power by 70%. "Basically, the beauty of it is that it gets rid of all the issues that were keeping DDR3 and DDR4 from going as fast as they could," said Jim Handy, director of research firm Objective Analysis. The first versions of the Hybrid Memory Cube, due out in the second half of 2013, will deliver 2GB and 4GB of memory.