eldavojohn writes: "Researchers at the University of Purdue's Birck Nanotechnology Center have released news of a proof of concept new ferroelectric transistor random access memory or "FeTRAM." This new technology is nonvolatile and the researchers claim it could use up to 99% less energy than current flash memory. Unlike most FeRAM technology that uses a capacitor, FeTRAM provides nondestructive readout by storing information using a ferroelectric transistor instead. From the article, 'The new technology also is compatible with industry manufacturing processes for complementary metal oxide semiconductors, or CMOS, used to produce computer chips. It has the potential to replace conventional memory systems.' So if they get this into production, you might not have to worry about your laptop cooking your genitals. They've been published in ACS (paywalled) and the professor leading the research has many patents filed relating to transistor nanotechology."
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