Comment Not to nay-say, but... (Score 5, Interesting) 127
I hate being a nay-sayer, but the NYT article is making quite a spectacle about this whole thing. What the group has truly done is demonstrate a novel method for placing a single phosphorus atom within silicon and proceeded to measure the semiconducting properties of the resultant device with quite good precision. Because the doping is the result of a single atom, they can resolve more than just "on" and "off", and in fact can read three states from it, so it gets its quantum computing title.
As a materials scientist, I'm worried that they don't show any long-term data and all their results appear (from my not-so-thorough reading of the originating Nature Nanotechnology report) to be based on a single device. How repeatable is this result and how consistent are the signals across multiple devices? How far will the phosphorus atom diffuse over the lifetime of the device? Or even over the first few hours of its operation at room temperature? How closely can these devices be placed to each other on the silicon chip without getting cross-interference or depriving the dopant of its discrete quantum states? The dopants in a normal device aren't too terribly close to each other. And finally, how big must the surrounding structure be?
Don't get me wrong, this is excellent science and well deserving of its publication in such a prestigious journal, but the spectacle that the NYT is creating around this and the dreams of such a tiny device is a bit premature.