Your NAND SSD is going to fail during an erase-program (aka "write") cycle, and except in the extremely unlikely case that the pattern you were writing did not involve changing any previously stored 1s to 0s on stuck bits, then the result is going to be wrong. You could read it, but you'd be reading the wrong data.
I disagree. Flash memory erases whole blocks in one go (with a high-voltage pulse). It should be simple enough to check that the whole block got properly erased during the erase part of the write cycle. If not, that is a worn-out sector, and can be marked as such with no loss of data.
Getting stuck in the programmed state is a good thing, it makes the check easier (check for all zeroed before writing instead of checking for a correct write afterwards) and possibly faster.
Correcting some other inaccuracies I noticed during this discussion, flash memory is a specific type of EEPROM (electrically erasable programmable read-only memory). The main failure mode occurs because charge builds up in the gate oxide (the insulator between the floating gate and the substrate).