lurking_giant writes: NewScientist.com is reporting that a group from the University of Geneva in Switzerland has discovered a material junction that acts as field effect transistor (FET) at 0.3 degrees Kelvin. The material is a single crystal containing two metal oxides, strontium titanate and lanthanum aluminate, as separate segments. At the interface of these materials, the team found a layer of free electrons called an electron gas in the material switches from superconductor to non-conductor (insulator) with the application of a voltage at the interface... Can't imagine anyone able to over clock this since they only hav
.3 degrees to work with but you never know.
"There's no limit to what you can accomplish if you don't demand credit"... Author Unknown.