Follow Slashdot blog updates by subscribing to our blog RSS feed

 



Forgot your password?
typodupeerror

Slashdot videos: Now with more Slashdot!

  • View

  • Discuss

  • Share

We've improved Slashdot's video section; now you can view our video interviews, product close-ups and site visits with all the usual Slashdot options to comment, share, etc. No more walled garden! It's a work in progress -- we hope you'll check it out (Learn more about the recent updates).

×

+ - MIT reports 400 GHz graphene transistor possible with 'Negative resistance'-> 1

Submitted by Anonymous Coward
An anonymous reader writes "The idea is to take a standard graphene field-effect transistor and find the circumstances in which it demonstrates negative resistance (or negative differential resistance, as they call it). They then use the dip in voltage, like a kind of switch, to perform logic.
They show how several graphene field-effect transistors can be combined and manipulated in a way that produces conventional logic gates. Graphene-based circuit can match patterns and it has several important advantages over silicon-based versions.
Liu and co can build elementary XOR gates out of only three graphene field-effect transistors compared to the eight or more required using silicon. That translates into a significantly smaller area on a chip. What’s more, graphene transistors can operate at speeds of over 400 GHz."

Link to Original Source
This discussion was created for logged-in users only, but now has been archived. No new comments can be posted.

MIT reports 400 GHz graphene transistor possible with 'Negative resistance'

Comments Filter:

"If truth is beauty, how come no one has their hair done in the library?" -- Lily Tomlin

Working...