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18 nanometer transistor 76

chrisr was the first of many to tell us that less than a week after the BBC reported Bell Labs had developed a 50 nanometer transistor, researchers at the University of California at Berkeley have announced an 18 nanometer transistor. Best of all, the team has decided to not patent the design, hoping it will lead to faster acceptance.
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18 nanometer transistor

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  • I think 'prior art' would be an issue at that point...
  • As far as I know, you cannot patent something that has already been published. I believe it falls under the idea of "prior art" or something like that. Of course, given the state of the patent office today, they'd probably let you do it anyway. The trick would come up when you're trying to enforce the patent.

  • by Anonymous Coward
    Under US law, only the originator of an invention can claim a patent. If the originator publicly announces the invention and fails to file (for 1 year? 2 years? I forget...) after publication, no patent can be granted to that particular invention.

    Kudos to the UC Berkeley people for their farsighted anti-patent actions in this case.
  • IANAPL, but...

    Well, that's true everywhere, except the US (And possibly Canada).

    In the US, you're allowed to patent something that you've published, as long as the patent is filed *within a year* of publication.

    Wierd, yes, considering no one else in the world does it (except possibly Canada).
  • No. Patent law is very clear on this. Only the inventor can patent a discovery. There may be issues about who is the real inventory, but evidence (publications, witnessed lab books, etc) are used to resolve that if it comes up.
  • Size large, grade-a kudos to these guys and all the others on the research team which have given the public an order-of-magnitude reduction in transistor gate size.

    Pretty ballsy move. I expect some beancounters at the university must be just a weeeee bit choked right now.

    --
    rickf@transpect.SPAM-B-GONE.net (remove the SPAM-B-GONE bit)

  • "The FinFET has a 18-nanometer-long gate, about the width of 100 atoms. It is not visible to the naked eye but can be viewed with a scanning electron microscope."

    No, really??? That's so small!

  • I wonder how they're going to build the thing for CPU's. Electron beam litography is nice in a lab, but I'm pretty sure the plants are quite far from using it for mass production. And optical lithography is not an option either as .18 is probably the best you can do with visible light. You would need to go to far ultra-violet spectrum I guess. That's also a place where patents could get in the way: when someone find a way to mass produce that.
  • What is the current size of transitors in consumer electronics/computers?
  • Most "cutting-edge" chips are fabricated in a .18 micron process, making them 10 times larger than this design, although .15 and .13 micron processes are coming online.

    -Jason
  • Under US law, only the originator of an invention can claim a patent. If the originator publicly announces the invention and fails to file (for 1 year? 2 years? I forget...) after publication, no patent can be granted to that particular invention.

    I found this: (United States Code, Title 35 - Patents, Part II - Patentability of inventions and grant of patents, Chapter 10 - Patentability of inventions, Sec. 102 Conditions for patentability; novelty and loss of right to patent) [cornell.edu]
    A person shall be entitled to a patent unless -
    (b) the invention was patented or described in a printed publication in this or a foreign country or in public use or on sale in this country, more than one year prior to the date of the application for patent in the United States

    So, the inventor has 1 year after the announcement.
    --
  • by CFN ( 114345 ) on Monday November 22, 1999 @09:00PM (#1511429)
    I can wait to wire a couple of these transistors together an hook up a Beowulf cluster on them.

    Hey, do you think we can port linux to one of them(to a single transistor)?

    Windows sux! I hope Bill Gates doesn't try to force us to upgrade to these new transistors so we can run Windows 2k.

    Do you think the NSA can use these transistors to monitor our emails? BOMB, NUCLEAR, IRAQ, CHINA, ALLAH.

    What did I leave out?
  • Comment removed based on user account deletion
  • Please tell me this is a "joke" post! :)

    "There are no shortcuts to any place worth going."

  • Correct me if I am wrong, but given:

    A: IBM's technology to fabricate LCD displays onto plastic, giving rise pretty soon to flexable and cheap LCD panels

    B: All these new transistor technologies, that allow pixels to be made smaller...

    Is it just me, or are we living in a very exciting era? 8-)

    -=- SiKnight
  • ...when CPUs and such can be implanted into our limbs or something to help "take some of the load off" for our brains. The power supply would have to be an elaborate yet simple and effective way of safely generating electrical current from the foods we eat and transmitting electrons via the nervous system network pre-installed in our bodies in order to make use of these chips. Well, nanotech and ingenious invertions like this are one step in the right direction!

    "There are no shortcuts to any place worth going."

  • I wonder if they can use X-RAY? That has a much smaller wavelength (higher resolution)

    -=- SiKnight
  • Sorry, transistor miniaturization has nothing to do with LCD's. What it does allow is basically faster cheaper smaller coolor microprocessors/memory, which should be enough for anyone. Of course, basic research at Berkeley's no substitute for proven mass production techniques, but its a start...
  • Pretty ballsy move. I expect some beancounters at the university must be just a weeeee bit choked right now.
    Yes and no.

    No, nobody is choked right now. Any patent would belong to the University, not to the researchers. The decision to not patent was made by the university. Hell, IIRC, the very first paper I signed when I matriculated as an undergrad at UCB [berkeley.edu] assigned all rights to any intelectual property I developed, while at the University, back to the school. And that was a long time ago.

    Yes, It is an insightful move by the University not to patent this.

    Go Bears!

  • The problem with X-ray is that you need an X-ray lens to do the focus... I think such a thing exists, but once again, it might not be suitable for mass production.
  • Can you open source hardware? :) Or maybe release it under a license similiar to GPL?
  • Very cool to see this. It looks like it would be easier to manufacture than the 'vertical transistor' recently announced.

    With all of the advancements in transistor size, you've got to think that wiring the little buggers together is going to get real interesting. Smaller transistors mean less voltage, less drive strength, and lower noise margins. Narrower interconnect means higher resistance. Try to pack the metal lines too close together and you've got even more noise problems.

    Aren't we already at the point where the interconnect is beginning to dominate silicon real estate?
  • by Baldrson ( 78598 ) on Monday November 22, 1999 @10:18PM (#1511441) Homepage Journal
    "We made the decision not to patent," Hu said. "We want the widest possible usage. We hope this becomes a mainstream transistor structure in the future."

    When guys are patenting obvious, or worse, prior art like "multimedia transmitted over the internet" and actually getting people to pay up, while other guys are increasing the cost-effectiveness of the information infrastructure by, oh, lets say a factor of 10, and can't receive substantial returns in support their talent for future risk-taking innovation -- the patent of invention has gone the way of the patent of nobility: It is obsolete.

    What made the patent of nobility obsolete was the corruption of the nobility by politics. What, apparently, has made the patent of invention obsolete is the corruption of invention by legalistics.

    We still need nobility. In technological civilization, nobility is in the creative act. The problem is the politicians and lawyers have demonstrated they are, as a cultural phenomenon, hostile to true nobility.

    The creative act deserves the respect, reward and protection traditionally reserved for nobles.

    Fortunately, creators, themselves, possess great power.

  • yes, at this point, interconnect is starting to become a bottleneck. Copper helps, silver would help more, although I haven't heard of anyone doing research into silver interconnect.. and with wierd effects like electron tunnelling really coming into full force at this size, and it will be a minor miracle if anyone actually gets this technology to work!

    of course, that's what engineering is all about..

    --------------------
    this space left intentionally blank



  • by Betcour ( 50623 ) on Monday November 22, 1999 @10:59PM (#1511443)
    Actually I reported that a French team made some 20 nanometers transistors a month ago but of course it didn't make it on Slashdot, as of course only the US can make innovations, and anything else doesn't exist.
  • Most semiconductors are produced now at 0.35 or 0.25 micron.

    Some devices that need to lower power consumption, and have very high clock speeds (read Intel and AMD CPUs) are built at 0.18 micron.

    The 0.25/0.18 is only an industry reference, and not the actual size of the transistors. Some high end manufacturers (again, Intel and AMD) have parts of their 0.18 products etched at 0.14 and even 0.12 micron right now. Motorola's upcoming 0.18 micron copper process (not the one that G4s are made with, which is an hybrid 0.25/0.18) is able to make transistors as small as 0.10 micron.

  • well it only has to drive enough current to drive the gates on someother tranistors that tiny ....

    To a first approximation ..... but it also has to drive the wires that connect them .... sadly we've reached an area where wire capacitance doesn't scale down as fast as everything else (because of edge effects are starting to dominate .... and the number of edges doesn't change no matter how small you make something. RC delays are now abig deal - that's why there's a big push for lower immpedance wires (Cu instead of Al for example - hell we'd use Au if it could be made to work) and lower capacitance insulators/dielectrics (but SiO is soooo easy to make on Si).

    So it has to sink enough current to charge/discharge the capacitance on the wires and other gates connected to it, at the switching speed you want to run it at - you design to fit.

  • actually it may be a VERY smart move on their part - the patent belongs to the university - not them ..... but guess what - they are now VERY HOT properties - if it's truely a big breakthrough big semi companies will be bidding for their services ....
  • Just imagine being one of the guys who announced the 50nm vertical transistor a couple of days ago. They must be feeling pretty sick right now...

    Would anybody be willing to fetch the JPEG image of this new device out of their browser cache and stick it up on the web? All the graphics seem to have been removed from the original site (slashdotted I guess ;o).

    Consciousness is not what it thinks it is
    Thought exists only as an abstraction
  • And in the press release, they indicated that they are looking to reduce the size to one-half of what is is now; and it wasn't in that, "You know, someday we might..." way, it was like a simple statement of fact. Jesus, a 9 nanometer transistor may actually be possible soon; could we actually see working nanotechnology within the next 20 years? Despite the vast number of technological advances that have occured over the past 100 years, the prospect of working nanotech just seems too... William Gibson, if you will. :) Like the man said in The Matrix, "This is a very exciting time!". :)

    Deosyne
  • by Anonymous Coward
    to make something that small the options will be either electron beam lithography or X-Ray lithography. The former draws out the pattern either in raster or direct scan straight onto the wafer, whereas the latter uses a 1:1 contact mask (hence no x-ray lend needed.) Unfortunately, both of the technologies are quite a long way from large scale industrial use, although EBL is already used in some small scale commercial applications
  • It looks like it's time lay the smack down on someone...

    When guys are patenting obvious, or worse, prior art like "multimedia transmitted over the internet" and actually getting people to pay up, while other guys are increasing the cost-effectiveness of the information infrastructure by, oh, lets say a factor of 10, and can't receive substantial returns in support their talent for future risk-taking innovation -- the patent of invention has gone the way of the patent of nobility: It is obsolete.

    Is the patent system abused? Yes. Obsolete? Hell no.

    What, apparently, has made the patent of invention obsolete is the corruption of invention by legalistics.

    The problem with is that the threshold for granting them is pathetically low. (See this patent on refrigerator magnets [ibm.com].) Add a Patent Office that doesn't/can't do nearly the research that should be done to determine prior art. Throw in a culture of litigation and fear of litigation; and you have a situation ripe for abuse.

    This situation can be corrected removing any of those conditions (However correcting a culture tends to to be alot harder than correcting the others.)

    1. Increase the budget to the Patent Office, so they can actually do research and determine if something is prior art.
    2. Make it easier for the patent office to declare unpatentable concepts (i.e. Cardboard glued to a magnet. Gee, didn't I make one of those back in grade school?)
    3. Have people actually challenge patents for once. No company will because they're afraid someone will come after they're dubious patents. A public action group would be ideal for this.


    In technological civilization, nobility is in the creative act. The problem is the politicians and lawyers have demonstrated they are, as a cultural phenomenon, hostile to true nobility.

    Mmmmm no. It's simple "Buisness is War". Who are the warriors in buisness? No, not the engineers and scientists, but rather lawyers. You create what you can and you hinder your competition <Malcom X> by any means necessary </Malcom X>. Hostile take over. Lawsuits. HR Raids. Patents. It's all the same.

    The creative act deserves the respect, reward and protection traditionally reserved for nobles.

    Yes creativity deserves resepect. Yes it deserves protection. Guess what? There's already a mechanism to protect products of creativity. It's called "patents".

    Nobels on the other hand deserve nothing since all they did to get their title was be born. Those that spout Divine-Right and Divine-Right-eque beliefs are either damn liars or damn fools. (However this does not mean you should go and spit in the face of Queen Elizabeth II or call her "Liz", her title deserves respect. However can lobby for the abolishion of the very monarchy she heads.)

    Fortunately, creators, themselves, possess great power.

    Wait. Did I miss something? Previously you said that the transistor inventors "can't receive substantial returns in support their talent for future risk-taking innovation" but now you say they have "great power" which is it? If you don't have the abiltiy to follow through with your invention what good is it?

  • Well, the IANA is the Internet Assigned Numbers Authority. PL could be one of several things, but the most likely one here is Pink Lizard.

    HTH. HAND.
  • Surely their decision NOT to patent is merely an open invitation to all those opportunists out there to go ahead and patent the technology?

    I have no real idea about what you can and can't patent and maybe other people can't patent it (pls tell me if this is the case) but if they could then the patent would almost surely be saught after by someone else?

  • by emmons ( 94632 )
    You can only patent things to your entity's name that you can be prove were first created in the name of that entity. ie: you can create a patent in your name of something you created, or a company can create a patent of something one of its employees made while on company time. Since Berkely already announced the invention, there is no way some one can insist that they had it first (unless the genuinely did, which must be proved).

    -----
  • I'm not too surprised that they are not applying for a patent. They are a state university, so the university would hold the rights to the patent. The actual researchers would have their names attached, but they would receive little monetary gain from any licensing (assuming this is the same type of agreement I had to sign at NCSU).

    In light of the recent discussions on patents and copyrights, I thought many of you might like to see what my alma mater has to say on this matter. The whole document may be accessed at
    http://www2.ncsu.edu/ncsu/research_outreach_exte nsion/policies/patent_policy.html

    Anyway, the preamble is a pleasant read for all of those opposed to frivilous/progress-stifling patents applications...

    "North Carolina State University is dedicated to teaching, research and extending knowledge to the public.

    It is the policy of the University to carry out its scholarly work in an open and free atmosphere and to publish results obtained therefrom freely, limited only by a short time delay in cases in which this is necessary to prepare and file applications. Patentable inventions sometimes arise out of research activities of its faculty, staff and students which are carried out wholly or in part with University facilities. As a public service institution, the University has an interest in assuring the utilization of such inventions for the public good. Protection must be provided for at least some of these inventions through patents and licenses to encourage their development and marketing. Patents and their exploitation, however, represent only a small part of the benefits accruing from either publicly or privately sponsored research.

    A portion of the research conducted by the University is supported by government and a portion by private industry. Service to the public, including private industry, is an integral part of the University's mission. As a public institution, the University, in its agreements with private industry or other private organizations, must keep the interests of the general public in view. The rights and privileges set forth in cooperative agreements or contracts, with respect to patents and copyrights developed as a result of research partly or wholly financed by private parties, must be fair and just to the inventor(s), the sponsor and the public. Research should be undertaken by the University under support from private parties only if it is consistent with and complementary to the University's goals and responsibilities to the public."

    Although, this document may be copyrighted, I'm not sure ;~)

    Eric
  • Although they're not disclosing details, from the picture it's pretty clear they don't depend on the lithography resolution to achieve this small size... otherwise there'd be no point in the announcement, since anyone could announce something that can't be build with today's technology.

    My guess is that they've achieved a controllable way to either side-etch the channel down to that width, or build it up in a chemically (not optically) produced crack.

  • So can anyone answer a couple of questions?

    It looks like these suckers will require a couple of poly layers to get the gate to wrap around the channel... will that require any type of mass changes to the fab process (besides going to, oh, I don't know, the x-ray band for the masking)

    Since the channel is about 18nm wide, these babies will have a (reletively) massive amount of resitance, as oppsed to the Bell Labs design which has a small gate, but a fairly large channel. Will this effect the charging of the next few gates down the line from them because...

    ... the gates seem to be rather large, and pretty full of poly. Will they have larger gate capacitances, and require more current to switch at the same speed?

    In a nutshell, would someone use these devices in high-performance applications, or would they only be suitable for getting better density on a chip? Oh ya, my knowledge of VLSI sucks, so please be kind with flames.

  • As I understand, the 50 nm transistor was created with a vertical channel, and the 18 nm transistor was created with a gate with a special shape (a fork) in order to pinch more effectively the electron stream, (if I made some mistake feel free to correct me).

    How about a transistor which combines both technologies ? :-)


  • Bell labs originally created the transistor. It was designed to replace the Tubs on the Phone network in an effort to make service more reliable. At first they held the patent and licensed the technology to anyone who wanted it. Although most U.S. companies in general were happy with the vacuum tube. A small Japanese company saw the potential for making a small (And affordable) pocket transistor radio. That company eventually because Sony.

    Later, Bell removed all fees for producing the transistor. Although this was mostly a move to reduce Monopoly pressure from the Gov't.

    The inventors of the transistor were happy to see they started the computer age. Their only regret was that the small size of pocket radio allowed teenagers to listen to the radio away from adults and thus contributed to the spread of Rock and Roll music.

    I think Bell Labs is likely to patent the process. However, I think they will license it for free.
  • Actually I reported that a French team made some 20 nanometers transistors a month ago but of course it
    didn't make it on Slashdot, as of course only the US can make innovations, and anything else doesn't exist



    "But when you look at the French 20 nanometer transistor closely, it looks A LOT like the old Russian design. In fact, they basically bought the design from the Russians, who stole it from US back in the 50's.", he deadpanned.

    I wish I had a nickel for every time someone said "Information wants to be free".
  • It's IANA.pl, obviously. It turns out they were just a huge buggy perl script all this time.
  • coaxial wrote

    It looks like it's time lay the smack down on someone...

    That's his allusion to power #1.

    It's simple "Buisness is War".

    #2

    by any means necessary .

    #3

    But when I say: Fortunately, creators, themselves, possess great power.

    Suddenly, the his allusions to power evaporate in the comment Wait. Did I miss something?

    These 3 allusions to power are given weight by the existence of a governmental system that threatens people with force. If one would "smack someone down..." declare "business is war..." and quote Malcolm X, surely one is aware that the limits of civility can be stretched to the breaking point. And that is exactly my point:

    If the creators of civilization are betrayed by its supposed maintainers, everyone loses, but the betrayers lose more.

  • Now, correct me if I'm wrong, but isn't there some danger in not patenting their design, especially the way the US Patent Office seems to be promiscuously handing out patents for stupid stuff that is in common use? If amazon.com [amazon.com] can get a patent on their "1 click shopping"(r) even though it would seem to be a pretty common practice (and I recently bought from a website that had an option to save your info for the next time you visited... hmmm, sounds like a patent violation there...), couldn't a big, meal ol' company like Intel come along and patent the design?

    Wouldn't a better idea be to patent the design and then GPL it, or something similar to that? Remember, Intel isn't making faster chips to make the world a better place, they're making faster chips because they like downloading greenbits from your wallet.

  • The problem with is that the threshold for granting them is pathetically low. (See this patent on refrigerator magnets.)

    While I agree with your premise that the threshold for patents is too low in the US (I like the European Patent Office criterea better), one has to wonder whether the particular invention you cited is in fact a good example of something that does not deserve a patent. It seems to me that having a magnetic sheet with attached perforated tags which could be printed with various forms of advertising is in fact a fairly useful idea, and one I haven't seen in use, either.

    I have seen a lot of ideas that may look trivial actually turn up to be EXTREMELY valuable. The Post-It, for example. What is that except a piece of paper with some glue on it? Is that, on the face of it, any different in simplicity than a refrigerator magnet with fly strips? Yet it has been worth hundreds of millions of dollars to 3M and is generally considered to be one of the most innovating approaches to using a product (a weak glue) in an unexpected way that has come along in recent memory.

    The fact of it is that the BEST ideas are simple - the ones that you look at and say 'why didn't I think of that!', not the complex Rube Goldbergs that we are all too often saddled with in our technological society.

  • OK, there sure seems to be a lot of confusion here. First off, this isn't extremely novel, dual/double channel devices (which is all this sounds to be) have been discussed for years in the literature, and have even been fabricated (but not with such a small gate LENGTH). As for wrapping the poly around the channel, it depends on their exact process, but it is very possible that they will do it with a single deposition, essentially growing the gate poly. You ask about going to "x-ray band" for masking, yes, they have to move away from optical lithography to get their 18 nm gate length, that is where the ebeam litho comes in. You seem confused about how the channel is "straddled" (an easy thing to be confused about by their wording). The "straddling" occurs on the top (where the gate usually lies) and the bottom, not the sides, so you can still have a WIDE MOSFET (when I say "gate," I mean gate vs. source vs. drain, not gate == transistor, they seem to use gate to mean both in the article, GRRR!) which will help your channel resistance. The resistance should actually be reduced because the whole channel will be inverted, limiting surface mobility effects (we have run some sims here to see a more than 2x current gain in dual vs. single gate designs). You ask about the increased gate capacitance (it seems you have seen a picture of their device, but I find none and would love to see images to make sure I have the correct mental image of what they have done), yes, you will increase you gate capacitance with the dual gate design (not due to thick poly, but due to increased area), but you should see more current gain as mentioned above. Finally, you ask whether this will be used for high-performance or circuit density, it should help with both, they tend to go hand in hand. I hope this helps you out a little bit, if you have more questions feel free to ask, and I will try and explain a bit better.

    One more thing, how to they figure that 18 nm is about 100 atoms in length? Last I checked the atomic spacing in single crystal silicon (a wafer) was on the order of 5.43 Angstroms, so my handy dandy Rat Shack calculator says about 33 atoms would fit in a line 18 nm long....don't you just love PR press releases?!

    One more thing (then I swear I will shut up), where did they come up with this stupid FinFET?? I would call this sucker a DGFET (Dual/Double Gate FET), but I guess they needed a new buzzword.
  • Who gets the last 1%????
  • the prospect of working nanotech just seems too... William Gibson, if you will.

    Gibson's got nothing. More like Engines of Creation [foresight.org].

  • The picture is available her e [berkeley.edu], and as you can see it is not a dual gated FET, but just has a gate that wraps around. Granted, I'm fairly sure that the picture is not to scale.

    Comments? And thank you for an intelligent reply.

  • Many thanks for the link to the pic. Yes, this is not at all what I had in mind, and they certainly deserve a new name for it (but I still don't get FinFET). The biggest problem I do see with this design is that it will only see large benefits (this is speculation, I haven't run any sims on a design like this) when you do have a very narrow width channel, and yes, that will kill your drive current. This will definitely limit the percentage of devices in a chip that would benefit from this design. However, I think it is still technologically important (not sure if my last post seemed to imply I felt otherwise). As for the concerns about needing more than one poly dep step, this should be a single dep, so I don't think this adds too much complexity to the process flow, only increases (dramatically I suspect) the alignment tolerances, which is already a pain at this scale.
  • Got the URL for the article? Or the text? I wouldn't mind reading it. You ranted about not being able to get it in as a feature, but I for one would love to see it even if it was just buried in the comments. Pretty please? :)
  • The was over a month ago and I lost the URL. A search on the website www.liberation.fr might turn out something (I tried myself but didn't manage to get the article back)

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